Studies of photoconductivity and FET behavior in examining drift mobility, surface depletion, and transient effects in Si-doped GaN nanowires examined in vacuum and air | NIST
Norman A. Sanford(Physical Measurement Laboratory), Aric W. Sanders(Physical Measurement Laboratory), Benjamin Klein(Kennesaw State University), K. Soria(Georgia Institute of Technology), Kristine A. Bertness, Lawrence H. Robins(Brigham Young University), Paul T. Blanchard(Physical Measurement Laboratory), John B. Schlager(Physical Measurement Laboratory)
Journal of Applied Physics
May 3, 2013
Cited by 0
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