Studies of photoconductivity and field effect transistor behavior in examining drift mobility, surface depletion, and transient effects in Si-doped GaN nanowires in vacuum and air
Norman A. Sanford(Physical Measurement Laboratory), Aric W. Sanders(Physical Measurement Laboratory), John B. Schlager(Physical Measurement Laboratory), Kris A. Bertness(Physical Measurement Laboratory), Benjamin Klein(Kennesaw State University), K. Soria(Georgia Institute of Technology), Lawrence H. Robins(Brigham Young University), Paul T. Blanchard(Physical Measurement Laboratory), Brianna S. Eller(Arizona State University)
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