25-nm p-channel vertical MOSFETs with SiGeC source-drainsMin Yang, James C. Sturm, Chia‐Lin Chang et al.|IEEE Electron Device Letters|1999Cited by 45
Low-Temperature Preparation of Oxygen- and Carbon-Free Silicon and Silicon-Germanium Surfaces for Silicon and Silicon-Germanium Epitaxial Growth by Rapid Thermal Chemical Vapor DepositionMalcolm S. Carroll, Min Yang, James C. Sturm|Journal of The Electrochemical Society|2000Cited by 37
Complete suppression of boron transient-enhanced diffusion and oxidation-enhanced diffusion in silicon using localized substitutional carbon incorporationMalcolm S. Carroll, Temel Büyüklimanli, James C. Sturm et al.|Applied Physics Letters|1998Cited by 35
Phosphorus Doping and Sharp Profiles in Silicon and Silicon-Germanium Epitaxy by Rapid Thermal Chemical Vapor DepositionMin Yang, Temel Büyüklimanli, Malcolm S. Carroll et al.|Journal of The Electrochemical Society|2000Cited by 28
Quantification of substitutional carbon loss from Si0.998C0.002 due to silicon self-interstitial injection during oxidationMalcolm S. Carroll, James C. Sturm|Applied Physics Letters|2002Cited by 16