Molecular beam deposition of Al2O3 on p-Ge(001)/Ge0.95Sn0.05 heterostructure and impact of a Ge-cap interfacial layer
Clément Merckling(IMEC), Matty Caymax(IMEC), Benjamin Vincent(IMEC), Shigeaki Zaima(Nagoya University), Wilfried Vandervorst(Imec the Netherlands), Alexis Franquet(IMEC), Shotaro Takeuchi(Fukui Prefectural University), Yosuke Shimura(Chiba University), Roger Loo(IMEC), Xiao Sun(Yale University), Osamu Nakatsuka(Nagoya University)
Cited by 33
Related Papers
Three-Dimensional Observation of the Conductive Filament in Nanoscaled Resistive Memory Devices
|Nano Letters|2014|338
Effective electrical passivation of Ge(100) for high-k gate dielectric layers using germanium oxide
|Applied Physics Letters|2007|271
Germanium MOSFET Devices: Advances in Materials Understanding, Process Development, and Electrical Performance
|Journal of The Electrochemical Society|2008|267
High-k dielectrics for future generation memory devices (Invited Paper)
|Microelectronic Engineering|2009|252
Undoped and <i>in-situ</i> B doped GeSn epitaxial growth on Ge by atmospheric pressure-chemical vapor deposition
|Applied Physics Letters|2011|189