Controlling the Degree of Forming Soft-Breakdown and Producing Superior Endurance Performance by Inserting BN-Based Layers in Resistive Random Access Memory
Tsung‐Ming Tsai(National Sun Yat-sen University), He Qian(University of Science and Technology of China), Kuan‐Chang Chang(National Taipei University of Technology), Yu-Shuo Lin(National Sun Yat-sen University), Po‐Hsun Chen(National Sun Yat-sen University), Jiun-Chiu Lin(National Sun Yat-sen University), Cheng-Hsien Wu(National Sun Yat-sen University), Wen‐Chung Chen, Huaqiang Wu(Institute of Microelectronics), Ning Deng(Fujitsu (China)), Chih-Hung Pan(National Sun Yat-sen University), Ni-Ke Lin(National Sun Yat-sen University)
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