Engineering interface-type resistance switching based on forming current compliance in ITO/Ga2O3:ITO/TiN resistance random access memory: Conduction mechanisms, temperature effects, and electrode influence

Chih-Hung Pan(National Sun Yat-sen University), Simon M. Sze(National Yang Ming Chiao Tung University), Shi-Wang Chang-Chien(National Sun Yat-sen University), Min-Chen Chen(National Sun Yat-sen University), Hui‐Chun Huang(National Sun Yat-sen University), Tsung‐Ming Tsai(National Sun Yat-sen University), Ning Deng(Fujitsu (China)), Huaqiang Wu(Tsinghua University), Po‐Hsun Chen(National Sun Yat-sen University), He Qian(University of Science and Technology of China), Kuan‐Chang Chang(National Taipei University of Technology), Ting‐Chang Chang(National Sun Yat-sen University)
Applied Physics Letters
October 31, 2016
Cited by 28


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