Homogeneous 2D MoTe<sub>2</sub> p–n Junctions and CMOS Inverters formed by Atomic‐Layer‐Deposition‐Induced DopingJune Yeong Lim, Seongil Im, Atiye Pezeshki et al.|Advanced Materials|2017Cited by 157
Low Power Consumption Complementary Inverters with n-MoS<sub>2</sub> and p-WSe<sub>2</sub> Dichalcogenide Nanosheets on Glass for Logic and Light-Emitting Diode CircuitsPyo Jin Jeon, Seongil Im, Sanghyuck Yu et al.|ACS Applied Materials & Interfaces|2015Cited by 144
Static and Dynamic Performance of Complementary Inverters Based on Nanosheet α-MoTe<sub>2</sub> <i>p</i>-Channel and MoS<sub>2</sub> <i>n</i>-Channel TransistorsAtiye Pezeshki, Seongil Im, Seyed Hossein Hosseini Shokouh et al.|ACS Nano|2015Cited by 122
High‐Performance, Air‐Stable, Top‐Gate, p‐Channel WSe<sub>2</sub> Field‐Effect Transistor with Fluoropolymer Buffer LayerSeyed Hossein Hosseini Shokouh, Seongil Im, Pyo Jin Jeon et al.|Advanced Functional Materials|2015Cited by 88
Trap density probing on top-gate MoS <sub>2</sub> nanosheet field-effect transistors by photo-excited charge collection spectroscopyKyunghee Choi, Seongil Im, Syed Raza Ali Raza et al.|Nanoscale|2015Cited by 78