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High‐Performance, Air‐Stable, Top‐Gate, p‐Channel WSe<sub>2</sub> Field‐Effect Transistor with Fluoropolymer Buffer LayerSeyed Hossein Hosseini Shokouh, Seongil Im, Pyo Jin Jeon et al.|Advanced Functional Materials|2015Cited by 88
Top and back gate molybdenum disulfide transistors coupled for logic and photo-inverter operationAtiye Pezeshki, Seongil Im, Seong Chan Jun et al.|Journal of Materials Chemistry C|2014Cited by 27