Homogeneous 2D MoTe<sub>2</sub> p–n Junctions and CMOS Inverters formed by Atomic‐Layer‐Deposition‐Induced DopingJune Yeong Lim, Seongil Im, Sanghyuck Yu et al.|Advanced Materials|2017Cited by 157
Low Power Consumption Complementary Inverters with n-MoS<sub>2</sub> and p-WSe<sub>2</sub> Dichalcogenide Nanosheets on Glass for Logic and Light-Emitting Diode CircuitsPyo Jin Jeon, Seongil Im, Jin Sung Kim et al.|ACS Applied Materials & Interfaces|2015Cited by 144
Vertical and In-Plane Current Devices Using NbS<sub>2</sub>/n-MoS<sub>2</sub> van der Waals Schottky Junction and Graphene ContactHyung Gon Shin, Seongil Im, Hyong Seo Yoon et al.|Nano Letters|2018Cited by 106
Coupling Two-Dimensional MoTe<sub>2</sub> and InGaZnO Thin-Film Materials for Hybrid PN Junction and CMOS InvertersHan Sol Lee, Seongil Im, Kyunghee Choi et al.|ACS Applied Materials & Interfaces|2017Cited by 36
Transition Metal Dichalcogenide‐Based Transistor Circuits for Gray Scale Organic Light‐Emitting DisplaysSanghyuck Yu, Seongil Im, Jongtae Ahn et al.|Advanced Functional Materials|2016Cited by 34