Consistent model for short-channel nMOSFET after hard gate oxide breakdownB. Kaczer, G. Groeseneken, K. Van de Mieroop et al.|IEEE Transactions on Electron Devices|2002Cited by 166
On the scalability of source/drain current enhancement in thin film sSOIE. Augendre, S. Biesemans, Geert Eneman et al.|Unknown|2005Cited by 24
Analysis of the Leakage Current Origin in Thin Strain Relaxed Buffer SubstratesGeert Eneman, K. De Meyer, Eddy Simoen et al.|Journal of The Electrochemical Society|2006Cited by 17