Interface Engineering for InGaAs n-MOSFET Application Using Plasma PH[sub 3]–N[sub 2] PassivationHoon-Jung Oh, Sungjoo Lee, Sumarlina Azzah Bte Suleiman|Journal of The Electrochemical Society|2010Cited by 6
Effects of Plasma-$\hbox{PH}_{3}$ Passivation on Mobility Degradation Mechanisms of $\hbox{In}_{0.53} \hbox{Ga}_{0.47}\hbox{As}$ nMOSFETsSumarlina Azzah Bte Suleiman, Sungjoo Lee, Hoon-Jung Oh|IEEE Transactions on Electron Devices|2012Cited by 3
Gate-Leakage and Carrier-Transport Mechanisms for Plasma-PH<sub>3</sub>Passivated InGaAs N-Channel Metal–Oxide–Semiconductor Field-Effect TransistorsSumarlina Azzah Bte Suleiman, Sungjoo Lee|Japanese Journal of Applied Physics|2012Cited by 1
Gate-Leakage and Carrier-Transport Mechanisms for Plasma-PH₃ Passivated InGaAs N-Channel Metal-Oxide-Semiconductor Field-Effect Transistors (Special Issue : Solid State Devices and Materials (1))Sumarlina Azzah Bte Suleiman, Sungjoo Lee|Japanese Journal of Applied Physics|2012Cited by 0
High-k Integration and Interface Engineering for III-V MOSFETsH. J. Oh, Sungjoo Lee, Sumarlina Azzah Bte Suleiman|ECS Meeting Abstracts|2011Cited by 0