Gate-Leakage and Carrier-Transport Mechanisms for Plasma-PH<sub>3</sub>Passivated InGaAs N-Channel Metal–Oxide–Semiconductor Field-Effect Transistors
Sumarlina Azzah Bte Suleiman(National University of Singapore), Sungjoo Lee(Tohoku University)
Cited by 1
Related Papers
Phosphorene/rhenium disulfide heterojunction-based negative differential resistance device for multi-valued logic
|Nature Communications|2016|448
Surface group modification and carrier transport properties of layered transition metal carbides (Ti <sub>2</sub> CT <sub>x</sub> , T: –OH, –F and –O)
|Nanoscale|2015|392
Large-Area MXene Electrode Array for Flexible Electronics
|ACS Nano|2019|342
Vertical Si-Nanowire <formula formulatype="inline"><tex Notation="TeX">$n$</tex></formula>-Type Tunneling FETs With Low Subthreshold Swing (<formula formulatype="inline"><tex Notation="TeX">$\leq \hbox{50}\ \hbox{mV/decade}$</tex> </formula>) at Room Temperature
|IEEE Electron Device Letters|2011|335