Plasma PH<inf>3</inf>-passivated high mobility inversion InGaAs MOSFET fabricated with self-aligned gate-first process and HfO<inf>2</inf>/TaN gate stackJianqiang Lin, D. Z., Weifeng Yang et al.|Unknown|2008Cited by 33
Interface Engineering for InGaAs n-MOSFET Application Using Plasma PH[sub 3]–N[sub 2] PassivationHoon-Jung Oh, Sungjoo Lee, Sumarlina Azzah Bte Suleiman|Journal of The Electrochemical Society|2010Cited by 6
Effects of Plasma-$\hbox{PH}_{3}$ Passivation on Mobility Degradation Mechanisms of $\hbox{In}_{0.53} \hbox{Ga}_{0.47}\hbox{As}$ nMOSFETsSumarlina Azzah Bte Suleiman, Sungjoo Lee, Hoon-Jung Oh|IEEE Transactions on Electron Devices|2012Cited by 3