Gate-Leakage and Carrier-Transport Mechanisms for Plasma-PH₃ Passivated InGaAs N-Channel Metal-Oxide-Semiconductor Field-Effect Transistors (Special Issue : Solid State Devices and Materials (1))
Sumarlina Azzah Bte Suleiman(National University of Singapore), Sungjoo Lee(Tohoku University)
Japanese Journal of Applied Physics
February 25, 2012
Cited by 0
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