The Role of Nonidealities in the Scaling of MoS<sub>2</sub> FETsDevin Verreck, Iuliana Radu, A. Mocuta et al.|IEEE Transactions on Electron Devices|2018Cited by 20
Use of the Indirect Photoluminescence Peak as an Optical Probe of Interface Defectivity in MoS<sub>2</sub>Alessandra Leonhardt, Stefan De Gendt, César Javier Lockhart de la Rosa et al.|Advanced Materials Interfaces|2020Cited by 15
Relation between film thickness and surface doping of MoS2 based field effect transistorsCésar Javier Lockhart de la Rosa, Stefan De Gendt, Goutham Arutchelvan et al.|APL Materials|2018Cited by 11
Trap Density Assessment on Multilayer WS<sub>2</sub> using Power-Dependent Indirect PhotoluminescenceAlessandra Leonhardt, Stefan De Gendt, Thomas Nuytten et al.|ECS Journal of Solid State Science and Technology|2020Cited by 3
(Invited) Impact of Substrates and Interfaces on 2D TMDC PropertiesAlessandra Leonhardt, Stefan De Gendt, Vivek Mootheri et al.|ECS Meeting Abstracts|2020Cited by 0