Relation between film thickness and surface doping of MoS2 based field effect transistors
César Javier Lockhart de la Rosa(IMEC), Stefan De Gendt(Imec the Netherlands), Alessandra Leonhardt(ASM International (Finland)), Iuliana Radu(IMEC), Cedric Huyghebaert(IMEC), Marc Heyns(IMEC), Goutham Arutchelvan(KU Leuven)
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