A novel approach of using a MBE template for ALD growth of high-κ dielectricsKuen Yong Lee, Raynien Kwo, Tai‐Bor Wu et al.|Journal of Crystal Growth|2007Cited by 7
InGaAs n-MOS devices integrated using ALD-HfO<inf>2</inf>/metal gate without surface cleaning and interfacial layer passivationYen‐Chung Chang, T. S. Lay, M. L. Huang et al.|Unknown|2007Cited by 0
Sub-nanometer EOT scaling on In<inf>0.53</inf>Ga<inf>0.47</inf>As with atomic layer deposited HfO<inf>2</inf> as gate dielectricKuen Yong Lee, J. Kwo, M. Hong et al.|Proceedings of the International Power Modulator Symposium and High Voltage Workshop/Proceedings of the ... International Power Modulator Symposium and ... High Voltage Workshop|2008Cited by 0