InGaAs n-MOS devices integrated using ALD-HfO<inf>2</inf>/metal gate without surface cleaning and interfacial layer passivation
Yen‐Chung Chang(National Tsing Hua University), T. S. Lay(National Sun Yat-sen University), Chien‐Chang Liao(China Medical University), M. L. Huang(National Tsing Hua University), J. Kwo(National Tsing Hua University), Y.J. Lee(National Tsing Hua University), T.D. Lin(National Tsing Hua University), Minghwei Hong(National Tsing Hua University), Kangguo Cheng(University of Illinois Urbana-Champaign), Kuen Yong Lee(Hanyang University)
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