Junction optimization for Reliability issues in floating gate NAND flash cellsChieh-En Lee, Chih-Yuan Lu, T. T. Han et al.|Unknown|2011Cited by 7
Program Trapped-Charge Effect on Random Telegraph-Noise Amplitude in a Planar SONOS Flash Memory CellH.C. Ma, Chih-Yuan Lu, You-Liang Chou et al.|IEEE Electron Device Letters|2009Cited by 5
Cell endurance prediction from a large-area SONOS capacitorChieh-En Lee, C.-Y. Lu, Wei-Hsiang Tu et al.|Unknown|2009Cited by 3
Program charge effect on random telegraph noise amplitude and its device structural dependence in SONOS flash memoryJ.P. Chiu, Chih-Yuan Lu, You-Liang Chou et al.|Unknown|2009Cited by 3
Estimating the detection stability of a Si nanowire sensor using an additional charging electrodeMin‐Cheng Chen, Fu-Liang Yang, Mu‐Yi Hua et al.|Unknown|2013Cited by 2