Ultra-scaled MOCVD MoS<sub>2</sub> MOSFETs with 42nm contact pitch and 250µA/µm drain current
Quentin Smets(IMEC), Iuliana Radu(IMEC), Julien Jussot(IMEC), Inge Asselberghs(IMEC), Benjamin Groven(IMEC), Matty Caymax(IMEC), Devin Verreck(IMEC), Goutham Arutchelvan(KU Leuven), Abhinav Gaur(KU Leuven), Ankit Nalin Mehta(IMEC), Dennis Lin(IMEC), Salim El Kazzi(IMEC)
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