Near-ideal subthreshold swing MoS <sub>2</sub> back-gate transistors with an optimized ultrathin HfO <sub>2</sub> dielectric layer
Yu Pan(Chinese Academy of Sciences), Huaxiang Yin(Chinese Academy of Sciences), Guobin Bai(Chinese Academy of Sciences), Zhenhua Wu(University of Chinese Academy of Sciences), Zhaohao Zhang(University of Chinese Academy of Sciences), Kailiang Huang(Chinese Academy of Sciences), Kunpeng Jia(Chinese Academy of Sciences), Jiahan Yu(Chinese Academy of Sciences), Qingzhu Zhang(Hebei University of Technology)
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