Ferroelectric Characteristics of Ultra-thin Hf&lt;inf&gt;1-x&lt;/inf&gt;Zr&lt;inf&gt;x&lt;/inf&gt;O&lt;inf&gt;2&lt;/inf&gt; Gate Stack and 1T Memory Operation Applications

M. H. Lee; K.-S. Li; C.-Y. Liao; H.-H. Chen; Cheng Tang; Z.-Y. Wang; P.-G. Chen; Y. C. Chou; Chin‐Guo Kuo; S-S. Gu; Ming-Han Liao; R.-C. Hong; Shih‐Yao Chen

doi:10.1109/edtm.2018.8421475

Ferroelectric Characteristics of Ultra-thin Hf<inf>1-x</inf>Zr<inf>x</inf>O<inf>2</inf> Gate Stack and 1T Memory Operation Applications

M. H. Lee(National Taiwan Normal University), K.-S. Li(National Institutes of Applied Research), C.-Y. Liao(National Taiwan Normal University), H.-H. Chen(National Taiwan Normal University), Cheng Tang(Queensland University of Technology), Z.-Y. Wang(National Taiwan Normal University), P.-G. Chen(National Taiwan Normal University), Y. C. Chou(National Taiwan Normal University), Chin‐Guo Kuo(National Taiwan Normal University), S-S. Gu(National Taiwan Normal University), Ming-Han Liao(National Chung Hsing University), R.-C. Hong(National Taiwan Normal University), Shih‐Yao Chen(Chung Hwa University of Medical Technology)

Unknown

March 1, 2018

10.1109/edtm.2018.8421475

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