Ferroelectric Al:HfO<inf>2</inf> negative capacitance FETsM. H. Lee, C. W. Liu, P.-G. Chen et al.|Unknown|2017Cited by 42
Electroluminescence from the Ge quantum dot MOS tunneling diodesMing-Han Liao, C. W. Liu, Yu Chen et al.|IEEE Electron Device Letters|2006Cited by 33
Ferroelectric HfZrO<sub>x</sub> FETs on SOI Substrate With Reverse-DIBL (Drain-Induced Barrier Lowering) and NDR (Negative Differential Resistance)Kuan‐Ting Chen, G.-Y. Siang, Ming-Han Liao et al.|IEEE Journal of the Electron Devices Society|2018Cited by 17
2 &#x03BC;m emission from Si/Ge heterojunction LED and up to 1.55 &#x03BC;m detection by GOI detectors with strain-enhanced featuresMing-Han Liao, C. W. Liu, Yu Chen et al.|Unknown|2006Cited by 3
Reduction of Metal/Carbon Nano-Tubes Interface Contact Resistance by Floating Catalyst Growing Method and SemimetalsY.-T. Tsai, Ming-Han Liao, Nilabh Basu et al.|IEEE Transactions on Electron Devices|2023Cited by 2