Extremely Steep Switch of Negative-Capacitance Nanosheet GAA-FETs and FinFETsM. H. Lee, C. W. Liu, Shih‐Yao Chen et al.|Unknown|2018Cited by 47
Ferroelectric Al:HfO<inf>2</inf> negative capacitance FETsM. H. Lee, C. W. Liu, P.-G. Chen et al.|Unknown|2017Cited by 42
Ferroelectric HfZrO<sub>x</sub> FETs on SOI Substrate With Reverse-DIBL (Drain-Induced Barrier Lowering) and NDR (Negative Differential Resistance)Kuan‐Ting Chen, G.-Y. Siang, Chieh Lo et al.|IEEE Journal of the Electron Devices Society|2018Cited by 17
Ferroelectric Characteristics of Ultra-thin Hf<inf>1-x</inf>Zr<inf>x</inf>O<inf>2</inf> Gate Stack and 1T Memory Operation ApplicationsM. H. Lee, K.-S. Li, Chin‐Guo Kuo et al.|Unknown|2018Cited by 1
Steep switch-off of In0.18Al0.82N/AlN/GaN on Si MIS-HEMTP.-G. Chen, M. H. Lee, Y. C. Chou et al.|Unknown|2018Cited by 0