Performance comparison of sub 1 nm sputtered TiN/HfO/sub 2/ nMOS and pMOSFETs
Wu‐ting Tsai, Marc Heyns(IMEC), L. Pantisano(IMEC), Matty Caymax(IMEC), Edward Young(Planetary Science Institute), L.-Å. Ragnarsson(IMEC), Stefan De Gendt(Imec the Netherlands), P.J. Chen(Texas Instruments (United States)), E. Cartier(IBM (United States)), T. Schram(IMEC), A. Kerber(Infineon Technologies (Germany)), Bart Onsia
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