Review—Device Assessment of Electrically Active Defects in High-Mobility Materials
C. Claeys(IMEC), Matty Caymax(IMEC), Eddy Simoen(IMEC), Andriy Hikavyy(IMEC), Somya Gupta(IMEC), G. Eneman(IMEC), Kai Ni(Rochester Institute of Technology), Roger Loo(IMEC), A. Alian(IMEC), Clément Merckling(IMEC)
Cited by 27
Related Papers
Origin of NBTI variability in deeply scaled pFETs
|Unknown|2010|309
Effective electrical passivation of Ge(100) for high-k gate dielectric layers using germanium oxide
|Applied Physics Letters|2007|271
Germanium MOSFET Devices: Advances in Materials Understanding, Process Development, and Electrical Performance
|Journal of The Electrochemical Society|2008|267
Undoped and <i>in-situ</i> B doped GeSn epitaxial growth on Ge by atmospheric pressure-chemical vapor deposition
|Applied Physics Letters|2011|189