Germanium Tin Tunneling Field Effect Transistor for Sub-0.4 V Operation
Yue Yang(National University of Singapore), Yee‐Chia Yeo(Agency for Science, Technology and Research), Kain Lu Low(University of Liverpool), Genquan Han(Xuzhou University of Technology), Pengfei Guo(Tiangong University), Wei Wang(National University of Singapore)
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