Electronic band structure and effective mass parameters of Ge1-xSnx alloysKain Lu Low, Yee‐Chia Yeo, Yue Yang et al.|Journal of Applied Physics|2012Cited by 239
Towards direct band-to-band tunneling in P-channel tunneling field effect transistor (TFET): Technology enablement by Germanium-tin (GeSn)Yue Yang, Yee‐Chia Yeo, Shaojian Su et al.|Unknown|2012Cited by 59
Germanium–Tin P-Channel Tunneling Field-Effect Transistor: Device Design and Technology DemonstrationYue Yang, Yee‐Chia Yeo, Genquan Han et al.|IEEE Transactions on Electron Devices|2013Cited by 58
Germanium-tin n-channel tunneling field-effect transistor: Device physics and simulation studyYue Yang, Yee‐Chia Yeo, Genquan Han et al.|Journal of Applied Physics|2013Cited by 46
Device Physics and Design of a L-Shaped Germanium Source Tunneling TransistorKain Lu Low, Yee‐Chia Yeo, Chunlei Zhan et al.|Japanese Journal of Applied Physics|2012Cited by 16