Gate-All-Around In<sub>0.53</sub>Ga<sub>0.47</sub>As Junctionless Nanowire FET With Tapered Source/Drain Structure
Kian-Hui Goh(National University of Singapore), Yee‐Chia Yeo(Agency for Science, Technology and Research), Gengchiau Liang(Chinese Academy of Sciences), Xiao Gong(University of Michigan), Kain Lu Low(University of Liverpool), Sachin Yadav(National University of Singapore)
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