Program/Erase Characteristics of Amorphous Gallium Indium Zinc Oxide Nonvolatile Memory
Huaxiang Yin(Chinese Academy of Sciences), Alexander Tikhonovsky(Samsung (South Korea)), Sunil Kim(Yonsei University), Yo‐Sep Min(Samsung (South Korea)), Jaechul Park(Samsung (South Korea)), Sang‐Wook Kim(Seoul National University), Youngsoo Park(Anan National College of Technology), Ihun Song(Samsung (South Korea)), Chang Jung Kim(Samsung (South Korea)), Hyuck Lim(Samsung (South Korea)), Jaewoong Hyun(Samsung (South Korea))
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