Germanium-tin n-channel tunneling field-effect transistor: Device physics and simulation study
Yue Yang(National University of Singapore), Yee‐Chia Yeo(Agency for Science, Technology and Research), Lanxiang Wang(Chinese Academy of Sciences), Kain Lu Low(University of Liverpool), Genquan Han(Xuzhou University of Technology), Pengfei Guo(Tiangong University), Wei Wang(Peng Cheng Laboratory)
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