Bulk Properties of MOCVD-Deposited HfO[sub 2] Layers for High k Dielectric Applications
Sven Van Elshocht(Columbia University), Marc Heyns(IMEC), Mikhaı̈l R. Baklanov(MIREA - Russian Technological University), J. Kluth(Imec the Netherlands), L. Daté(Imec the Netherlands), T. Witters(IMEC), Guy Vereecke(IMEC), Chao Zhao, Thierry Conard(IMEC), Matty Caymax(IMEC), Danielle Vanhaeren(IMEC), Bert Brijs(IMEC), Stefan De Gendt(Imec the Netherlands), V. Cosnier(Imec the Netherlands), Martine Claes(Imec the Netherlands), Didier Pique(Applied Materials (United States)), Olivier Richard(IMEC), L. Carbonell, Richard G. Carter(Imec the Netherlands)
Cited by 18
Related Papers
Three-Dimensional Observation of the Conductive Filament in Nanoscaled Resistive Memory Devices
|Nano Letters|2014|338
Electrical properties of high-κ gate dielectrics: Challenges, current issues, and possible solutions
|Materials Science and Engineering R Reports|2006|278
Effective electrical passivation of Ge(100) for high-k gate dielectric layers using germanium oxide
|Applied Physics Letters|2007|271
Germanium MOSFET Devices: Advances in Materials Understanding, Process Development, and Electrical Performance
|Journal of The Electrochemical Society|2008|267