Source/Drain Formation of Self-Aligned Top-Gate Amorphous GaInZnO Thin-Film Transistors by $\hbox{NH}_{3}$ Plasma Treatment
Sangwook Kim(Samsung (South Korea)), Youngsoo Park(ON Semiconductor (United States)), Sunil Kim(Yonsei University), Huaxiang Yin(Chinese Academy of Sciences), Eunha Lee(Samsung (South Korea)), Hyung-Ik Lee(Samsung (South Korea)), Sungho Park(Kookmin University), Ihun Song(Samsung (South Korea)), Jaechul Park(Samsung (South Korea)), Changjung Kim(Samsung (South Korea))
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