A theoretical study of the initial oxidation of the GaAs(001)-β2(2×4) surface
Marco Scarrozza(IMEC), M. M. Heyns(IMEC), Michel Houssa(IMEC), Geoffrey Pourtois(IMEC), Marc Meuris(IMEC), A. Stesmans(KU Leuven), Matty Caymax(IMEC)
Cited by 32
Related Papers
Electrical properties of high-κ gate dielectrics: Challenges, current issues, and possible solutions
|Materials Science and Engineering R Reports|2006|278
Effective electrical passivation of Ge(100) for high-k gate dielectric layers using germanium oxide
|Applied Physics Letters|2007|271
Germanium MOSFET Devices: Advances in Materials Understanding, Process Development, and Electrical Performance
|Journal of The Electrochemical Society|2008|267
High-k dielectrics for future generation memory devices (Invited Paper)
|Microelectronic Engineering|2009|252