Interfaces of high-k dielectrics on GaAs: Their common features and the relationship with Fermi level pinning (Invited Paper)Matty Caymax, Marc Heyns, Marc Meuris et al.|Microelectronic Engineering|2009Cited by 51
Adsorption of molecular oxygen on the reconstructed β2(2×4)-GaAs(001) surface: A first-principles studyMarco Scarrozza, A. Stesmans, Geoffrey Pourtois et al.|Surface Science|2008Cited by 34
A theoretical study of the initial oxidation of the GaAs(001)-β2(2×4) surfaceMarco Scarrozza, M. M. Heyns, Geoffrey Pourtois et al.|Applied Physics Letters|2009Cited by 32
A first-principles study of the structural and electronic properties of III–V/thermal oxide interfacesMarco Scarrozza, Marc Heyns, A. Stesmans et al.|Microelectronic Engineering|2009Cited by 18