Germanium–Tin P-Channel Tunneling Field-Effect Transistor: Device Design and Technology Demonstration
Yue Yang(National University of Singapore), Yee‐Chia Yeo(Agency for Science, Technology and Research), Lanxiang Wang(Chinese Academy of Sciences), Kain Lu Low(University of Liverpool), Genquan Han(Xuzhou University of Technology), Wei Wang(Peng Cheng Laboratory), Pengfei Guo(National University of Singapore), Xiao Gong(University of Michigan)
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