Degradation of Si/sub 1-x/Ge/sub x/ epitaxial heterojunction bipolar transistors by 1-MeV fast neutrons
H. Ohyama(National Institute of Technology, Kumamoto College), Matty Caymax(IMEC), Jan Vanhellemont(IMEC), Jef Poortmans(IMEC), H. Sunaga(National Institute of Technology, Kumamoto College), Y. Takami(Rikkyo University), K. Hayama(National Institute of Technology, Kumamoto College)
Cited by 32
Related Papers
Solar cells utilizing small molecular weight organic semiconductors
|Progress in Photovoltaics Research and Applications|2007|509
Effective electrical passivation of Ge(100) for high-k gate dielectric layers using germanium oxide
|Applied Physics Letters|2007|271
Germanium MOSFET Devices: Advances in Materials Understanding, Process Development, and Electrical Performance
|Journal of The Electrochemical Society|2008|267
Undoped and <i>in-situ</i> B doped GeSn epitaxial growth on Ge by atmospheric pressure-chemical vapor deposition
|Applied Physics Letters|2011|189