Degradation of Si/sub 1-x/Ge/sub x/ epitaxial heterojunction bipolar transistors by 1-MeV fast neutronsH. Ohyama, Matty Caymax, Jan Vanhellemont et al.|IEEE Transactions on Nuclear Science|1995Cited by 32
Germanium content dependence of radiation damage in strained Si/sub 1-x/Ge/sub x/ epitaxial devicesH. Ohyama, P. Clauws, Y. Takami et al.|IEEE Transactions on Nuclear Science|1994Cited by 28
Degradation of Si1−<i>x</i>Ge<i>x</i> epitaxial devices by proton irradiationH. Ohyama, Yoshiya Uwatoko, K. Hayama et al.|Applied Physics Letters|1996Cited by 19
On the degradation of 1-MeV electron irradiated Si/sub 1-x/Ge/sub x/ diodesH. Ohyama, P. Clauws, Matty Caymax et al.|IEEE Transactions on Nuclear Science|1994Cited by 17