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Germanium content dependence of radiation damage in strained Si/sub 1-x/Ge/sub x/ epitaxial devicesH. Ohyama, P. Clauws, Jan Vanhellemont et al.|IEEE Transactions on Nuclear Science|1994Cited by 28
Degradation of Si1−<i>x</i>Ge<i>x</i> epitaxial devices by proton irradiationH. Ohyama, Yoshiya Uwatoko, I. Nashiyama et al.|Applied Physics Letters|1996Cited by 19