A nanoanalytical investigation of elemental distributions in high-k dielectric gate stacks on silicon
F.T. Docherty(Imperial College London), Catriona M. McGilvery(Imperial College London), Stefan De Gendt(Imec the Netherlands), David W. McComb(The Ohio State University), A. J. Craven(University of Glasgow), S. McFadzean(University of Glasgow), Mhairi Mackenzie(Urban Big Data Centre)
Cited by 4
Related Papers
Theories of Change and Realistic Evaluation
|Evaluation|2007|376
Electrical properties of high-κ gate dielectrics: Challenges, current issues, and possible solutions
|Materials Science and Engineering R Reports|2006|278
What (or who) causes health inequalities: Theories, evidence and implications?
|Health Policy|2013|186
Structure and composition of silicon-stabilized tricalcium phosphate
|Biomaterials|2002|162