Magnetic properties of <i>n</i>-GaMnN thin films

G. T. Thaler(University of Florida), M. E. Overberg(University of Florida), B. Gila(University of Florida), R. M. Frazier(University of Florida), C. R. Abernathy(University of Florida), S. J. Pearton(University of Florida), Jong‐Soo Lee(Seoul National University), Sungwon Lee(Seoul National University), Y. D. Park(Seoul National University), Z. G. Khim(Seoul National University), J. Kim(University of Florida), F. Ren(University of Florida)
Applied Physics Letters
May 27, 2002
10.1063/1.1481533
Cited by 332

Abstract

GaMnN thin films were synthesized using gas-source molecular-beam epitaxy. Mn concentrations between 3 and 12 at. % were investigated. No evidence of second-phase formation was observed by powder x-ray diffraction or high-resolution cross section transmission electron microscopy in films with 9% or less Mn. The films were n type as determined by capacitance–voltage or Hall analysis. Magnetic characterization performed using a squid magnetometer showed evidence of ferromagnetic ordering at room temperature for all samples. In agreement with theoretical predictions, material with 3% Mn showed the highest degree of ordering per Mn atom. At 320 K, the samples show a nonzero magnetization indicating a TC above room temperature.

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