Investigation on doping dependency of solution-processed Ga-doped ZnO thin film transistor

Won Jun Park(Yonsei University), Hyun Soo Shin(Yonsei University), Byung Du Ahn(Yonsei University), Gun Hee Kim(Yonsei University), Seung Min Lee(Yonsei University), Kyung‐Ho Kim(Yonsei University), Hyun Jae Kim(Yonsei University)
Applied Physics Letters
August 25, 2008
10.1063/1.2976309
Cited by 122

Abstract

Ga-doped ZnO (GZO) thin film transistors (TFTs) were fabricated based on the solution-processed method and GZO TFTs were investigated according to the variation of the Ga doping concentration [Ga∕Zn (%)]. A field-effect mobility of 1.63cm2∕Vs and a drain current on/off ratio of 4.17×106 were observed in the 5.4 % Ga-doped TFT. This result shows good agreement with its structural properties and electrical properties of the GZO channel layer. It is believed that the optimal and desirable electrical properties of the TFTs can be obtained by adjusting the Ga doping concentration.

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