A General Route to Printable High‐Mobility Transparent Amorphous Oxide Semiconductors

Abstract

A general low-cost method for ink-jet printing transparent amorphous oxide semiconductors (see figure) is presented. The process uses metal halide precursors dissolved in acetonitrile, and this precursor solution is capable of forming a uniform and continuous metal halide thin film over a large area through both ink-jet printing and blanket-coating techniques.