Modeling of amorphous InGaZnO4 thin film transistors and their subgap density of states
Hsing‐Hung Hsieh(Tokyo Institute of Technology), Toshio Kamiya(Tokyo Institute of Technology), Kenji Nomura(Tokyo Institute of Technology), Hideo Hosono(Tokyo Institute of Technology), Chung‐Chih Wu(National Taiwan University)
Cited by 352
Abstract
We report a model of the carrier transport and the subgap density of states in amorphous InGaZnO4 (a-IGZO) for device simulation of a-IGZO thin-film transistors (TFTs) operated in both the depletion mode and the enhancement mode. A simple model using a constant mobility and two-step subgap density of states reproduced well the characteristics of the a-IGZO TFTs. a-IGZO exhibits low densities of tail states and deep gap states, leading to small subthreshold swings and high mobilities.
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