Chonnam National University
ORCID: 0000-0001-8138-7945Publishes on Probiotics and Fermented Foods, Thin-Film Transistor Technologies, ZnO doping and properties. 34 papers and 867 citations.
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A general low-cost method for ink-jet printing transparent amorphous oxide semiconductors (see figure) is presented. The process uses metal halide precursors dissolved in acetonitrile, and this precursor solution is capable of forming a uniform and continuous metal halide thin film over a large area through both ink-jet printing and blanket-coating techniques.
Abstract The recent advance in soft solution processing of inorganic materials offers an exciting opportunity to develop large‐area manufacturing technologies for inorganic thin‐film transistors (TFTs). In this paper, we report our recent progress in fabricating CdS TFTs using chemical bath deposition (CBD) to deposit CdS channel layers. Device analysis of an enhancement‐mode CdS metal–insulator–semiconductor field effect transistor (MISFET) with a field‐effect mobility of ∼1.5 cm 2 V −1 s −1 and a threshold voltage of V T ∼ 14 V is reported here. An on‐to‐off ratio of ∼10 6 is achieved. This rather large drain current on‐to‐off ratio indicates that this device will function well as a switch. An examination of the CdS film morphology by scanning electron microscopy indicates that the films deposited by CBD and used for our current device fabrication are dominated by a particle sticking growth mechanism. This is supported by a real‐time quartz crystal microbalance growth curve and atomic force microscopy characterizations of the particles formed in the CBD solution. A different bath condition for CBD was tested to obtain a dense CdS layer. A selected‐area electron diffraction pattern indicates that the CdS thin film deposited by CBD has a hexagonal structure with an optical bandgap of 2.4 eV as determined by UV–Vis absorption. Copyright © 2005 John Wiley & Sons, Ltd.
. that was published in Journal of Microbiology and Biotechnology (2018, 28:11, 1800-1805). The ninth author (Jin Hyup Lee) should be marked as corresponding author (*) with latest author (Young Jun Kim). The correspondence should appear as: *Corresponding authors Young Jun Kim Phone: +82-44-860-1435; Fax: +82-44-860-1586; E-mail: yk46@korea.ac.kr Jin Hyup Lee Phone: +82-44-860-1437 Fax: +82-44-860-1586; E-mail: jinhyuplee@korea.ac.kr.