Vacancy-engineering implants for high boron activation in silicon on insulatorAndrew J. Smith, Mario Barozzi, M. Bersani et al.|Applied Physics Letters|2006Cited by 26
Vacancy engineering for ultra-shallow junction formationR. Gwilliam, Andrew J. Smith, N. E. B. Cowern et al.|Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms|2007Cited by 5
Junction Stability of B Doped Layers in SOI Formed with Optimized Vacancy Engineering ImplantsAndrew J. Smith, Mario Barozzi, N. E. B. Cowern et al.|AIP conference proceedings|2006Cited by 3
Ultra-shallow Junction Formation in SOI using Vacancy EngineeringR. Gwilliam, Andrew J. Smith, B. Colombeau et al.|AIP conference proceedings|2006Cited by 1