Study of electron and hole injection statistics of BE-SONOS NAND FlashHang-Ting Lue, Chih‐Yuan Lu, Chester Lo et al.|Unknown|2010Cited by 9
Highly Scalable and Reliable Multi-bit/cell Nitride Trapping Nonvolatile Memory Using Enhanced ANS-ONO Process with A Nitridized InterfaceYang‐Hsin Shih, Erh-Kun Lai, Jung-Yu Hsieh et al.|Unknown|2006Cited by 6
Chip-level reliability study of barrier engineered (BE) floating gate (FG) Flash memory devicesHang-Ting Lue, Chih-Yuan Lu, JiFong Pan et al.|Unknown|2010Cited by 1