Highly Scalable and Reliable Multi-bit/cell Nitride Trapping Nonvolatile Memory Using Enhanced ANS-ONO Process with A Nitridized Interface
Yang‐Hsin Shih(National Yang Ming Chiao Tung University), Chih-Yuan Lu(Macronix International (Taiwan)), J. Ku(Macronix International (Taiwan)), Ming-Tsung Wu(Macronix International (Taiwan)), Ful-Long Ni(Macronix International (Taiwan)), T.H. Hsu(Macronix International (Taiwan)), K. Y. Hsieh(Macronix International (Taiwan)), Rich Liu(Macronix International (Taiwan)), Kaikai Ni(Macronix International (Taiwan)), Wei Lü(Dalian University of Technology), K.C. Chen(Macronix International (Taiwan)), Jung-Yu Hsieh(Macronix International (Taiwan)), Erh-Kun Lai(Macronix International (Taiwan)), Ming Liaw(Minghsin University of Science and Technology), Lee‐Wei Yang(National Tsing Hua University), Tung‐Huan Chou(Macronix International (Taiwan))
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