Chip-level reliability study of barrier engineered (BE) floating gate (FG) Flash memory devices
Hang-Ting Lue(Macronix International (Taiwan)), Chih-Yuan Lu(Macronix International (Taiwan)), T. H. Yang(Southern Taiwan Science Park), M.S. Chen(Minghsin University of Science and Technology), K. F. Chen(Minghsin University of Science and Technology), Y. J. Chen(Minghsin University of Science and Technology), Y.F. Chang, JiFong Pan, Szu-Yu Wang(Southern Taiwan Science Park), I. J. Huang(National Taiwan Ocean University), Wei Lü(Dalian University of Technology), Chester Lo(Minghsin University of Science and Technology), C.S. Chang(Minghsin University of Science and Technology), T. T. Han(Minghsin University of Science and Technology), Ming Liaw(Minghsin University of Science and Technology), Y. C. Lee, Kuang-Yeu Hsieh(Macronix International (Taiwan)), K. C. Chen(Southern Taiwan Science Park)
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