Highly Scalable and Reliable Multi-bit/cell Nitride Trapping Nonvolatile Memory Using Enhanced ANS-ONO Process with A Nitridized InterfaceYang‐Hsin Shih, Chih-Yuan Lu, Kaikai Ni et al.|Unknown|2006Cited by 6
Program Trapped-Charge Effect on Random Telegraph-Noise Amplitude in a Planar SONOS Flash Memory CellH.C. Ma, Chih-Yuan Lu, You-Liang Chou et al.|IEEE Electron Device Letters|2009Cited by 5
Program charge effect on random telegraph noise amplitude and its device structural dependence in SONOS flash memoryJ.P. Chiu, Chih-Yuan Lu, You-Liang Chou et al.|Unknown|2009Cited by 3